Nature of the band gap of halide perovskites <em> ABX</em><sub>3</sub> (<em> A</em> = CH<sub>3</sub>NH<sub>3</sub>, Cs; <em> B</em> = Sn, Pb; <em> X</em> = Cl, Br, I): First-principles calculations<xref ref-type="fn" rid="cpb150734fn1">*</xref>
Energy band structure of bcc Sn in the equilibrium geometry with (lower... | Download Scientific Diagram
Band Gap Tuning via Lattice Contraction and Octahedral Tilting in Perovskite Materials for Photovoltaics | Journal of the American Chemical Society
Band gap engineering of bulk and nanosheet SnO: an insight into the interlayer Sn–Sn lone pair interactions - Physical Chemistry Chemical Physics (RSC Publishing)
Published electronic structure calculations of tin - Wparker
Full band structure of Ge 1-x Sn x along high symmetry lines in the... | Download Scientific Diagram
Energy band structure of β-Sn in the experimental geometry with (lower... | Download Scientific Diagram
Bandgap Tunability in Zn(Sn,Ge)N2 Semiconductor Alloys - Narang - 2014 - Advanced Materials - Wiley Online Library
Frontiers | Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities
Electronic properties of the Sn1−xPbxO alloy and band alignment of the SnO/PbO system: a DFT study | Scientific Reports
A hybrid functional first-principles study on the band structure of non-strained Ge<sub>1−<em>x</em></sub>Sn<sub><em>x</em></sub> alloys
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration | Scientific Reports
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration | Scientific Reports
Published electronic structure calculations of tin - Wparker
Pathway to oxide photovoltaics via band-structure engineering of SnO: APL Materials: Vol 4, No 10
Electronic band structure for Si, Ge and α -Sn. Eg and E Γ are the... | Download Scientific Diagram
Color online) Electronic band structures of the α-Sn and the β-Sn. | Download Scientific Diagram
Band Structure - an overview | ScienceDirect Topics
Achieving direct band gap in germanium through integration of Sn alloying and external strain: Journal of Applied Physics: Vol 113, No 7
Band Gap Tailoring and Structure-Composition Relationship within the Alloyed Semiconductor Cu2BaGe1–xSnxSe4 | Chemistry of Materials
Tin(ii) thiocyanate Sn(NCS)2 – a wide band gap coordination polymer semiconductor with a 2D structure - Journal of Materials Chemistry C (RSC Publishing)
Electronic band structure for Si, Ge and α -Sn. Eg and E Γ are the... | Download Scientific Diagram
